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| PD -95171 IRG4PC40SPBF INSULATED GATE BIPOLAR TRANSISTOR Features * Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * Industry standard TO-247AC package * Lead-Free C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.32V @VGE = 15V, IC = 31A n-channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's optimized for specified application conditions * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. TO-247AC Max. 600 60 31 120 120 20 15 160 65 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.24 --- 6 (0.21) Max. 0.77 --- 40 --- Units C/W g (oz) www.irf.com 1 04/23/04 IRG4PC40SPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Emitter-to-Collector Breakdown Voltage T 18 -- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 0.75 -- 1.32 VCE(ON) Collector-to-Emitter Saturation Voltage -- 1.68 -- 1.32 VGE(th) Gate Threshold Voltage 3.0 -- VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- -9.3 gfe Forward Transconductance U 12 21 -- -- ICES Zero Gate Voltage Collector Current -- -- -- -- IGES Gate-to-Emitter Leakage Current -- -- V(BR)CES V(BR)ECS Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0A -- V/C VGE = 0V, IC = 1.0mA VGE = 15V 1.5 IC = 31A -- IC = 60A See Fig.2, 5 V -- IC = 31A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 31A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 100 14 34 22 18 650 380 0.45 6.5 6.95 23 21 1000 940 12 13 2200 140 26 Max. Units Conditions 150 IC = 31A 21 nC VCC = 400V See Fig. 8 51 VGE = 15V -- -- TJ = 25C ns 980 IC = 31A, VCC = 480V 570 VGE = 15V, RG = 10 -- Energy losses include "tail" -- mJ See Fig. 10, 11, 13, 14 9.9 -- TJ = 150C, -- IC = 31A, VCC = 480V ns -- VGE = 15V, RG = 10 -- Energy losses include "tail" -- mJ See Fig. 13, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot. R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10, (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PC40SPBF 80 Fo r bo th: T rian g ular wa ve : 60 Load C urrent (A ) D u ty cy c le : 5 0 % TJ = 1 2 5 C T s in k = 90 C G a te d riv e a s s p e c ifie d P ow er D is sip atio n = 35 W C la m p v o lta ge : 8 0% o f rated S q u a re w a v e : 40 60 % of rate d v o ltage 20 Id e al d io d e s 0 0.1 1 10 A 100 f, Fre q u e n cy (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 1000 IC , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 100 T J = 150C 10 TJ = 25C TJ = 150C 10 TJ = 25C 1 0.1 1 V G E = 15V 20s PULSE WIDTH 10 A 1 5 6 7 V C C = 50V 5s PULSE WIDTH A 8 9 10 VC E , Collector-to-Emitter Voltage (V) VG E , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC40SPBF 60 V C E , C ollec to r-to -E m itte r V oltage (V ) V G E = 15V 2.0 Maximum DC Collector Current (A) VGE = 15V 8 0 s P U L S E W ID T H 50 I C = 62A 40 30 1.5 20 I C = 31A 10 I C = 16A 1.0 -60 -40 -20 0 20 40 60 80 0 25 50 75 100 125 A 150 A 100 120 140 160 TC , Case Temperature (C) T J , Ju n c tio n T e m p e ra tu re (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 1 Therm al Response (Z th JC ) D = 0 .5 0 0.2 0 0 .1 0.1 0 0 .05 0.0 2 0.0 1 SIN G LE P UL SE (T H ER M A L R E SP O NS E ) PD M t 1 t2 N o te s: 1 . D u ty fa c to r D = t 1 / t2 0 .0 1 0 .0 0 0 0 1 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R ectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC40SPBF 4000 V GE , G a te -to -E m itter V oltage (V ) A V GE = C ie s = C re s = C oes = 0V , f = 1M H z C ge + C gc , Cc e S H O R T E D C gc C ce + C g c 20 VC E = 4 0 0 V IC = 31A 16 C , C a pa cita nce (pF ) 3000 C ie s 2000 12 8 C o es 1000 C res 0 1 10 4 0 0 20 40 60 80 100 A 120 100 V C E , C ollector-to-Em itter Vo ltag e (V) Q g , Total G a te C ha rge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 7.8 T o ta l S w itching L oss es (m J) 7.7 T otal Sw itc hing Lo sse s (m J) V CC VGE TJ IC = 480V = 15V = 25 C = 31A 100 R G = 10 V G E = 1 5V V C C = 4 80 V I C = 62A 7.6 I C = 31A 10 7.5 IC = 16A 7.4 7.3 0 10 20 30 40 50 A 60 1 -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , G ate R esistan ce () TJ , Ju nctio n Te m p erature (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC40SPBF 30 I C , C ollecto r-to -Em itter Cu rrent (A) Total Switching Losses (mJ) RG TJ V CC V GE = = = = 10 150C 480V 15V 1000 VG E E 2 0V G= T J = 12 5 C 20 100 S A FE O P E R A TIN G A R E A 10 10 0 0 10 20 30 40 50 60 70 A 1 1 10 100 1000 I C , Collector-to-Emitter Current (A) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC40SPBF L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25C 480F 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S VC D .U .T. Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4PC40SPBF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information E XAMPLE : T HIS IS AN IRF PE 30 WIT H AS S EMB LY L OT CODE 5657 AS S E MB LE D ON WW 35, 2000 IN T HE AS S E MB L Y LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT E RNAT IONAL RE CT IF IE R L OGO AS S E MB L Y L OT CODE PART NUMB ER IR F PE 30 56 035H 57 DAT E CODE YE AR 0 = 2000 WE E K 35 L INE H IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/04 8 www.irf.com |
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